Avalanche Photodiodes – Silicon and InGaAs APD

These rear entry "reach-through" silicon APDs offer the best compromise in terms of cost and performance for applications requiring high speed and low noise photon detection from 400nm up to 1100nm. They feature low noise, high quantum efficiency and high gain while maintaining reasonably low operating voltage. The active area varies from 0.5mm to 3mm to accommodate a large variety of applications. The "S" series of the C30902 family of APDs can be used in either their normal linear mode (VR < VBR) or as photon counter in the Geiger mode (VR > VBR). This series is particularly wellsuited for ultra-sensitive photon measurements in biomedical and analytical instruments. Precise temperature control can be achieved with a thermo electric cooler which can be used to improve noise and responsivity or to maintain constant responsivity over a wide range of ambient temperature. High quantum efficiency can be achieved from 1100nm to 1700nm with our InGaAs Avalanche Photodiodes. They were designed to maintain high gain, high quantum efficiency and high bandwidth even with their large area of up to 200 µm. The short distance between to window and the active area allows easy interface with optical system.